Improvement in optoelectronic properties of AlGaAs/InGaAs laser in near-infrared region

Sana Saeed; Muhammad Usman; Shazma Ali

doi:10.1364/FIO.2022.JTu4B.28

Frontiers in Optics + Laser Science 2022 (FIO, LS)
Technical Digest Series (Optica Publishing Group, 2022),
paper JTu4B.28
•https://doi.org/10.1364/FIO.2022.JTu4B.28

Improvement in optoelectronic properties of AlGaAs/InGaAs laser in near-infrared region

Sana Saeed, Muhammad Usman, and Shazma Ali

Frontiers in Optics 2022

Rochester, New York United States
17–20 October 2022
ISBN: 978-1-957171-17-3

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Joint Poster Session IB (Remote) (JTu4B)

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S. Saeed, M. Usman, and S. Ali, "Improvement in optoelectronic properties of AlGaAs/InGaAs laser in near-infrared region," in Frontiers in Optics + Laser Science 2022 (FIO, LS), Technical Digest Series (Optica Publishing Group, 2022), paper JTu4B.28.

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Abstract

Increased aluminum concentration up to 95% in the n-cladding layer in a separate confinement heterostructure improves the optoelectronic performance of arsenide (As) laser diodes (SCH). The lasing threshold has been lowered to 1094.54 A/cm² from 1132.84 A/cm².

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