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Inverse design of a 4-way crossing for integration of anisotropic materials on silicon waveguides

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Abstract

We present a compact (6.5 x 6.5 μm) silicon photonics design of a 4-way crossing with minimized cross-talk <20 dB in all ports and an area of only 19.86 µm2. The design was realized using gradient descent shape optimization and the adjoint method. It is manufactured using e-beam lithography and characterized for the C-and L-bands.

© 2022 The Author(s)

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More Like This
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