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Design and Simulation of Multiple Quantum Well Vertical Cavity Tunneling Injection Transistor Laser

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Abstract

In this paper, we proposed a Vertical Cavity Tunneling Injection graded-base Transistor Laser with three quantum wells. We achieved a 14.8 GHz improvement in optical bandwidth compared to previously reported results.

© 2022 The Author(s)

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More Like This
Design and Simulation of Double Quantum Well Vertical Cavity Tunneling Injection Transistor Laser for Technical Characteristics Improvement

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JTu1A.34 Frontiers in Optics (FiO) 2021

Technical Characteristic Improvement for Tunneling Injection Transistor Laser using Single Barrier-Double Quantum Well Graded Structure

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T4A.165 Asia Communications and Photonics Conference (ACP) 2021

Performance Study of a Tunnel Injection Transistor Laser with Multiple Quantum-Wells in the Base

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M4A.4 International Conference on Fibre Optics and Photonics (Photonics) 2014

Multiple versus Single Quantum Well Transistor Laser Performances

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Characteristics of 1.3 μm AlGalnAs-based multiple quantum well tunnel injection lasers

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CTuP16 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

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