Effect of Doping Profile on the Threshold for the Parasitic Lasing and Thermoelastic Deformations in the Fe:ZnSe Laser with a Disk Geometry of the Active Element

E.E. Alekseev; N.M. Andronova; S.Y. Kazantsev; S.Y. Kazantsev; L.S. Mashkovtseva; L.S. Mashkovtseva

doi:10.1364/EUVXRAY.2020.JM3A.26

OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS)
OSA Technical Digest (Optica Publishing Group, 2020),
paper JM3A.26
•https://doi.org/10.1364/EUVXRAY.2020.JM3A.26

Effect of Doping Profile on the Threshold for the Parasitic Lasing and Thermoelastic Deformations in the Fe:ZnSe Laser with a Disk Geometry of the Active Element

E.E. Alekseev, N.M. Andronova, S.Y. Kazantsev, and L.S. Mashkovtseva

High Intensity Lasers and High Field Phenomena 2020

Washington, DC United States
16–20 November 2020
ISBN: 978-1-943580-73-6

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Joint Poster Session I (JM3A)

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E. E. Alekseev, N. M. Andronova, S. Y. Kazantsev, and L. S. Mashkovtseva, "Effect of Doping Profile on the Threshold for the Parasitic Lasing and Thermoelastic Deformations in the Fe:ZnSe Laser with a Disk Geometry of the Active Element," in OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS), L. Assoufid, P. Naulleau, M. Couprie, T. Ishikawa, J. Rocca, C. Haefner, G. Sansone, T. Metzger, F. Quéré, M. Ebrahim-Zadeh, A. Helmy, F. Laurell, and G. Leo, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper JM3A.26.

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Abstract

It has been shown by numerical simulation that the inhomogeneous distribution of alloying centers in a Fe:ZnSe laser makes it possible to increase the threshold for parasitic lasing and reduce the thermooptical distortions.

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