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Influence of Gas Partial Pressure on the Optoelectronic and Structural Properties of Si, SiC and SiGe Films by PECVD

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Abstract

We address the link between partial pressure and solid phase properties of silicon films and their alloys synthesized by PECVD. Partial pressure is better than flows in order to predict their structural and optoelectronic properties.

© 2016 Optical Society of America

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