Fast Photorefractive Multiple Quantum Well working at 1.55 µm

A. Le Corre; H. L'haridon; S. Salaün; R. Lever; M. Baudet; M. Gauneau; J.C. Keromnes; J. Pleumeekers; S. Mottet; B. Lambert; G. Moisan; C. Vaudry; C. De Matos; S. Gosselin

doi:10.1364/HOLOGRAPHY.1996.HTuA.2

Holography
Technical Digest Series (Optica Publishing Group, 1996),
paper HTuA.2
•https://doi.org/10.1364/HOLOGRAPHY.1996.HTuA.2

Fast Photorefractive Multiple Quantum Well working at 1.55 µm

A. Le Corre, H. L'haridon, S. Salaün, R. Lever, M. Baudet, M. Gauneau, J.C. Keromnes, J. Pleumeekers, S. Mottet, B. Lambert, G. Moisan, C. Vaudry, C. De Matos, and S. Gosselin

Holography 1996

Massachusetts United States
29–30 April 1996
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A. Le Corre, H. L'haridon, S. Salaün, R. Lever, M. Baudet, M. Gauneau, J. C. Keromnes, J. Pleumeekers, S. Mottet, B. Lambert, G. Moisan, C. Vaudry, C. De Matos, and S. Gosselin, "Fast Photorefractive Multiple Quantum Well working at 1.55 µm," in Holography, Technical Digest Series (Optica Publishing Group, 1996), paper HTuA.2.

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Abstract

Fast optical switching devices based on resonant photorefractive (PR) phenomena in semi-insulating multiple quantum well (MQW) are very promising due to the large electrooptic effect related to Quantum Confined Stark Effect (QCSE) near the excitonic absorption peak. Up to now such structures were working at 0.8 µm in the GaAs-AIGaAs system ^1,2. This communication presents devices in the InP-GalnAs(P) system for telecommunication applications. Our aim is to obtain fast optical switching devices working at 1.55 µm with submicrosecond switching time and grating relaxation time larger than 1 microsecond.

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