Abstract

The measurements in the present work were carried out on unswept synthetic electronic grade quartz crystals. Samples were cut out of a Y-grown bar into separate plates belonging to each of the different growth sectors of a Y-plate (namely, +X, -X, +Z, -Z). Each sample was about 2x8x11mm³ with the main faces perpendicular to the Y-direction. Crystals were normally X-rayed (55Kv, 18 ma) for a few minutes at about 10K. The glow curve obtained then on warming the crystal exhibited a variety of peaks and differed in the +X samples compared to the +Z ones.¹ The XTTL was observed when the X-irradiated +X-growth sample was warmed up to about 220K, cooled down end X-irradiated again at 10K. During the warm-up after the re-irradiation the glow curve exhibited an extremely strong peak near 190K (at a heatinc rate of 10k per minute). The 190K peak did not appear in the Z-growth samples. A necessary condition for the appearance of the 190K peak was the pre-population of the traps associated with the regular thermoluminescence peaks appearing in the 200 - 300K temperature range.

© 1984 Optical Society of America