Abstract

The role of defects (intrinsic / extrinsic) is well known in the general understanding of different electronic processes involved in the various structure-sensitive properties. Impurities present as traces or doped intentionally in the luminescent materials (activators/or co-activators) may act as trapping or recombination centres depending on their nature. Conventational measurements on TL, TSC, dielectric constant (k′), conductivity (σ_ac) and EPR are being used to obtain information on the trapping and recombination mechanisms related to such impurity centres

© 1984 Optical Society of America