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Laser Induced Defect Centers in Ce3+:CaF2

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Abstract

Upon irradiation of a 1.3 mm thick sample of 0.05% Ce3+:CaF2 with the 308 nm emission of a XeCl excimer laser, we have observed coloration of the crystal by laser induced defect centers. The absorption spectrum of the induced centers is broad band and peaks at about 500 nm. The defect center has been associated with the excitation of cerium ions in the crystal. By irradiating with a 351 nm laser of comparable intensity, no colo­ration was produced. The centers are only created if one pumps into the 4f to 5d absorption band of the cerium ions in near resonance with 308 nm.

© 1984 Optical Society of America

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