Abstract

The goal of integrated optics is to integrate monolithically various optical components such as light sources, couplers, waveguides, switches, filters, modulators, and detectors onto a single wafer. To achieve this goal, a technology is required for the preparation of high quality semiconducting layers of different electrical and optical properties, and at the same time, these layers have to be shaped into appropriate configurations to perform their specific functions. Molecular beam epitaxy⁽¹⁾ has the potential to fulfill these requirements. The favorable feature of MBE is the ability to grow epitaxial layers over a large area with precise layer thickness and composition profiles. Furthermore, it permits the use of controlled masking during the growth of the epitaxial layer so that various structures may be formed on the wafer monolithically.

© 1978 Optical Society of America