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Conferences > IGWO > 1978 > WB > WB3

Room-Temperature Ga(1-x)AlxAs-GaAs Double Heterostructure Lasers Grown by Chemical Vapor Deposition

R. D. Dupuis and P. D. Dapkus

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Abstract

Since the first development of GaAlAs-GaAs heterostructure lasers (1-3) most of these devices have been grown by liquid-phase epitaxy (LPE) (4). In the past few yeras, another technique, that of molecular-beam epitaxy (MBE), has been extensively studied (5) and used to grow structures for room-temperature double­heterostructure (DH) GaAlAs-GaAs lasers (6). Both of these techniques have inherent disadvantages and limitations for the large-scale, cost-effective production of such devices.

© 1978 Optical Society of America

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