Abstract

Low threshold current as well as stable transverse monomode emission are basic requirements for application of the injection laser in optical communications. Low threshold currents are needed to reduce power consumption and heat dissipation while stability of the fundamental transverse mode is essentially to avoid nonlinearities in the P(I)-characteristics of the lasers. In the past, several laser structures have been developed to meet these requirements /1,2,3/. However, preparation of these devices becomes rather complicated by processing steps like oxide isolation, diffusion or double-epitaxy. It is the purpose of this paper to describe the mechanisms of current confinement and transverse mode stabilization of a newly developed simple laser structure /4/. Furthermore, detailed measurements on the relevant lasing characteristics are presented.

© 1980 Optical Society of America