Abstract

Strip-buried-heterostructure (SBH) lasers fabricated from GaAlAs for use at 0.88 μm have been shown to possess many desirable properties.^1,2 In the present work we describe the first demonstration of an InGaAsP SBH laser for use at 1.3 μm. The long wavelength SBH laser retains the desirable properties of the GaAlAs device including stable-fundamental-mode operation, linear light-current characteristic, high output power and a narrower beam divergence than for simple buried heterostructure (BH) lasers.³ In addition to these excellent properties the InGaAsP SBH laser is shown to be capable of a maximum power output at least twice as high as comparable GaAlAs SBH lasers¹ without the occurrence of catastrophic mirror damage.

© 1980 Optical Society of America