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Temperature Characteristics of InGaAsP/InP DH Lasers

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Abstract

InGaAsP/InP double heterostructure (DH) lasers1) with wavelengths of 1 μm region are considered to be the most promising devices for light sources in optical fiber communication systems. In this paper, we present the theoretical and experimental study of temperature characteristics in InGaAsP/InP DH lasers. To explain the temperature variation of oscillation characteristics, especially the strong temperature dependence of threshold current2), we notice two possiblities as follows; behaviour of interfacial recombination at or near InP-InGaAsP interfaces, and leakages of injected carriers through hetero-barriers between active and cladding layers.

© 1980 Optical Society of America

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