Abstract

Recently 1.5-1.6μm wavelength range lasers have been staged as very attractive sources for ultra low-loss optical fiber communications. ⁽¹⁾ These wavelength range can be covered with GaInAsP/InP DH lasers.^(2)-(5) Low threshold 1.45-1.65μm (100) GaInAsP/InP laser was obtained⁽⁶⁾ by use of anti-meltback layer to prevent the meltback problem of GaInAsP active layer.⁽⁷⁾ Room temperature CW lasing operations of 1.5μm range GaInAsP/InP laser were realized respectively at 1.51μm⁽⁶⁾ and 1.56μm⁽⁸⁾ in wafer structure with anti-meltback layer and 1.55μm⁽⁹⁾ by use of low temperature crystal growth technique. From above mentioned point of view, it is considered to be very interesting to develop efficient CW GaInAsP/InP lasers covering whole long wavelength range of 1.5 to 1.65μm.

© 1980 Optical Society of America