Abstract
Molecular beam epitaxy (MBE)1 is a crystal growth technique that is most suitable for the preparation and integration of opto-electronỉc devices. It not only permits the growth of very high quality large area (can be as large as 4 in2) uniform and smooth layers with precisely controlled thicknesses and chemical compositions, it also allows selective area growth of patterned multilayer structures with specific material compositions,2,3 and writing of epitaxial line structures with lengthwise varying thickness, chemical composition, and controlled thickness profiles.4 With MBE, very low current-threshold AℓxGa1-xAs/AℓyGa1-y As double-heterostructure (DH) lasers have also been prepared covering the active layer thickness from ~ 300 Å to 4000 Å5,6 and the lasing emission wavelength from 8900 Å to 7200 Å.
© 1980 Optical Society of America
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