Abstract

The first demonstration of the growth of GaAs-Al_xGa_1-xAs transverse-junction stripe (TJS) lasers on semi-insulating substrates was reported by Lee, Margalit and Yariv.^(1,2) Lasers of this type are characterized by low thresholds and stable single-mode operation up to 110°C.⁽³⁾ Recently, long life CW operation of TJS lasers has been demonstrated by Susaki et al.⁽⁴⁾ These previous results were achieved using liquid phase epitaxy (LPE), with thresholds falling in the range of 30 to 40 mA. Molecular beam epitaxy (MBE) is a relatively new crystal growth technique which not only offers precise dimensional controls in the film growth direction, but also can achieve selective two-dimensional structures on the wafer surface. For example, monolithic integration of a laser and a waveguide with a tapered coupler has been demonstrated with MBE.⁽⁹⁾ We report here the first preparation by MBE of low threshold, single mode TJS lasers grown on semi-insulating substrates. In conjunction with the two-dimensional selective growth capability of MBE, the results may have potential applications in the field of integrated optics.

© 1980 Optical Society of America