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Conferences > IGWO > 1980 > WC > WC4

In0.53Ga0.47As PIN-FET Photo-Receiver for 1.0-1.7µm Wavelength Fiber Optic Systems

R. F. Leheny, R. E. Nahory, M. A. Pollack, and E. D. Beebe

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Abstract

Recent interest in long wavelength photo-detectors for fiber optic communications systems operating in the 1.0 to 1.7µm wavelength region has been directed at the possible utilization of a very low capacitance PIN photodiode coupled directly to a low noise FET amplifier.1 We report on the properties of PIN photodiodes fabricated from In0.53Ga0.47AS material which meet the requirements for this PIN-FET photo-receiver application.

© 1980 Optical Society of America

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