Abstract

High-speed InP optoelectronic switches have been developed for analog signal processing applications. Switches of this type were originally demonstrated in Si (Ref. 1,2) and GaAs (Ref. 3) and have been used for a number of signal generation and processing applications.⁴ These previously reported devices had a relatively high on-state impedance and/or their laser drivers had a low duty cycle. The InP switches reported here overcome these problems and hence they are better suited for some important analog processing functions than either the Si or GaAs switches. The InP switches have typically a 30-psec rise time and have been used to generate a train of 70-psec-wide pulses at 900 MHz and to accurately sample an rf signal at 275 and 550 MS/s.

© 1980 Optical Society of America