Abstract
The properties of the GaInAsP/InP material system have been extensively explored and applied to a wide range of optoelectronic devices which could be used for 1-1.6μm optical fiber communications. Very recently, measurement on bulk InP has revealed an electro-optic effect of the same order of magnitude as that present in GaAs1. We have taken advantage of this property to fabricate another InP guided-wave device, an electro-optic directional coupler (EDC).
© 1982 Optical Society of America
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