Abstract

PLZT [(Pb,La)(Zr,Ti)O₃] thin film is one of the most promising materials for optical integrated circuits. The PLZT films have potential for their stronger electrooptic effect than conventional Ti-diffused LiNbO₃ and for monolithic integration with other active devices fabricated on a same substrate. Several workers have tried to prepare PLZT films of optical quality^1,2). Using an rf-planar magnetron sputtering system, we succeeded in epitaxial growth of PLZT single crystal film on sapphire from PLZT(28/0/100) target and confirmed an electrooptic effect of the film³⁾. Basic operation of optical switches have been also confirmed⁴⁾. In this paper, we report high frequency operation, optical damage of the PLZT switches and propose a butt-coupling technique in a layered structure.

© 1984 Optical Society of America