InGaAsP Semiconductor Lasers With Integrated Semiconductor Amplifier-Modulators at 1.3 μm Wavelength by

G. Eisenstein; T. P. Lee; R. S. Tucker; C. A. Burrus; W. B. Sessa; P. Besomi

doi:10.1364/IGWO.1984.TuD2

Seventh Topical Meeting on Integrated and Guided-Wave Optics
Technical Digest Series (Optica Publishing Group, 1984),
paper TuD2
•https://doi.org/10.1364/IGWO.1984.TuD2

InGaAsP Semiconductor Lasers With Integrated Semiconductor Amplifier-Modulators at 1.3 μm Wavelength by

G. Eisenstein, T. P. Lee, R. S. Tucker, C. A. Burrus, W. B. Sessa, and P. Besomi

Integrated and Guided Wave Optics 1984

Kissimmee, Florida United States
24–26 April 1984
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Monolithic Techniques (TuD)

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G. Eisenstein, T. P. Lee, R. S. Tucker, C. A. Burrus, W. B. Sessa, and P. Besomi, "InGaAsP Semiconductor Lasers With Integrated Semiconductor Amplifier-Modulators at 1.3 μm Wavelength by," in Seventh Topical Meeting on Integrated and Guided-Wave Optics, Technical Digest Series (Optica Publishing Group, 1984), paper TuD2.

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Abstract

We describe experimental investigations of two types of semiconductor light sources comprising lasers integrated with amplifier - modulators. The integrated amplifier-modulators were obtained by antireflection (AR) coating the output facet of one section of a cleaved-coupled-cavity (C³) laser. In the first configuration, the modulator operates in conjunction with a CW single-frequency laser while in the second, it is used to gate a train of narrow pulses from a laser which is mode-locked in a fiber resonator. In both cases, the modulated signal has a high on/off ratio (20 dB) and the output spectrum is not affected by the modulator.

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