Abstract

LiNbO₃ waveguide devices operating in the 1.3−1.6-μm wavelength region with very low total insertion losses have now been demonstrated.¹ Such low losses enable the use of these devices as intracavity active elements in a variety of composite-cavity semiconductor lasers. Such lasers are important for narrow-linewidth sources in coherent communications² and for mode locking.³ Most reported composite-cavity lasers use a passive extended cavity, but active extended cavities are attractive, since they enable a variety of control functions to be incorporated in addition to the control produced by the drive current to the gain medium.

© 1986 Optical Society of America