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Low noise flip-chip integrated photoreceiver with an InGaAs-PIN photodiode and a GaAs IC

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Abstract

Very small input capacitance and high transconductance of the first stage transistor in optical front-end receiver circuit are required to minimize the circuit noise for high bit-rate operation. However, even if bare-chip-assembling is adopted, the excess capacitance due to chip assembly degrades the receiver performance. To minimize the total input capacitance of the receiver circuit, an optoelectronic integrated circuit (OEIC) has been studied for use in the 1.3 ~ 1. 5 μm wavelength range (1) (2), but the integration scale of electronic devices and the material selectivity are limited by the difficulty of the chip fabrication process in InP based OEICs. In this paper, we describe the low-noise and high-speed performance of the flip-chip integrated (3) photoreceiver which consists of an InGaAs-PIN photodiode with very small capacitance and a GaAs pre-amplifier IC, and show the great potentials for long-wavelength optical transmission systems.

© 1988 Optical Society of America

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