Source modeling and calculation of mask irradiance during EUV lithography condenser design

Lenny Laughlin; Jose M. Sasian

doi:10.1364/IODC.2002.ITuC3

International Optical Design Conference
2002 OSA Technical Digest Series (Optica Publishing Group, 2002),
paper ITuC3
•https://doi.org/10.1364/IODC.2002.ITuC3

Source modeling and calculation of mask irradiance during EUV lithography condenser design

Lenny Laughlin and Jose M. Sasian

International Optical Design Conference 2002

Tucson, Arizona United States
3–5 June 2002
ISBN: 1-55752-714-8

From the session
Illumination Systems (ITuC)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
L. Laughlin and J. M. Sasian, "Source modeling and calculation of mask irradiance during EUV lithography condenser design," in International Optical Design Conference, 2002 OSA Technical Digest Series (Optica Publishing Group, 2002), paper ITuC3.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

EUV lithography condenser design requires a precise and efficient method for determining uniformity of irradiance on the mask plane. A new methodology is described and results for the method are compared to calculated values.

PDF Article

More Like This

Critical Illumination Condenser for EUV Projection Lithography

Simon J. Cohen and Lynn G. Seppala
EOS.109 Extreme Ultraviolet Lithography (EUL) 1994

Liquid Droplet-target Laser Plasma Sources for EUV Lithography

C. Keyser, C-S. Koay, R. Bernath, M. Richardson, E. Turcu, H. Rieger, and M. Powers
CThB2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2002

An Overview of Optical Systems for 30 nm Resolution Lithography at EUV Wavelengths

Russ Hudyma
IMD1 International Optical Design Conference (IODC) 2002

Previous Article Next Article