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Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

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Abstract

Direct-gap photoluminescence and electroluminescence from Ge1−ySny/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si1−xyGexSny photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.

© 2012 Optical Society of America

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