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Advantages of AlGaN-based UV-LEDs with AlxGa1−xN-AlyGa1−yN-AlxGa1−xN (y<x) complex barriers

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The advantages of AlGaN-based UV-LEDs with AlxGa1-xN-AlyGa1-yN-AlxGa1-xN (y<x) complex barriers in the MQWs are studied theorically. The energy band diagrams, distributions of carrier concentrations in the quantum wells, current-voltage characteristic curves, and output power-current performance curves are investigated numerically. The simulation results show that the light output power of AlGaN-based UV-LED with AlxGa1-xN-AlyGa1-yN-AlxGa1-xN (y<x) barriers in the MQWs, in comparison to the conventional UV-LED, is increased about 24.1% when the injection current is 150 mA. What is more, the efficiency drop of the proposed LED is much smaller when the injection current is 600 mA. The improvement of the device performance comes from the appropriate modification of the energy band diagrams which increases the injection efficiency of holes.

© 2012 Optical Society of America

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