Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper ITuD5
  • https://doi.org/10.1364/IPNRA.2007.ITuD5

Thermal Stability of Reflection Multilayers on p-AlGaN/GaN contact of deep-UV Light Emitting Diodes

Not Accessible

Your library or personal account may give you access

Abstract

Thermal stability of reflection layer (Ni/Au/Al/Ti/Au) on p-AlGaN/GaN of deep-UV flip chip LEDs has been studied. We observed that at 280 °C for 45 s, bonding temperature has no degradation effect on device forward voltage.

© 2007 Optical Society of America

PDF Article
More Like This
Improvement of Light-Extraction Efficiency of Deep-UV LEDs using Transparent p-AlGaN Contact Layer

Noritoshi Maeda and Hideki Hirayama
WH2_3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013

Impact of the n+-GaN/AlGaN/p+-GaN Tunnel Junction for III-nitride UV Light-emitting Diodes

Luping Li, Yonghui Zhang, and Zi-Hui Zhang
Su1G.1 Asia Communications and Photonics Conference (ACP) 2017

AlGaN/GaN Nanostructures for UV Light Emitting Diodes

J Brault, B Damilano, M Leroux, A Courville, S Chenot, G. Randazzo, P Vennéguès, P DeMierry, J Massies, D Rosales, T Bretagnon, and B Gil
AF1J.3 Asia Communications and Photonics Conference (ACP) 2014

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.