Abstract

We demonstrate wide temperature range operation of a micron-size high speed silicon electrooptic modulator over a temperature range of 15 K. We show that bit patterns can be maintained by varying the bias current through the device to counter temperature changes. We demonstrate operation at 1 G bit/s in a silicon ring electrooptic modulator of quality factor ~4000 over 15 K. This result has significant impact on the integration of micron-scale silicon ring modulators for optical networks on chip.

© 2008 Optical Society of America