Abstract

The exact characteristics of an integrated-optic circuit are difficult to predict because of the sensitivity of the waveguide parameters to slight variations in the fabrication process. Recently, the annealed proton-exchange (APE) process has been developed for LiNbO₃ and LiTaO₃ integrated-optic fabrication.^1-5 The APE process has eased the fabrication constraints by allowing the fabricator to trim the entire circuit by annealing the device (in an oven) to achieve greater diffusion of the exchange ion. This process works quite well except that it is not possible to anneal localized regions of the circuit selectively.

© 1990 Optical Society of America