Abstract

Studies of the optical nonlinearities near the band edge in semiconductors are important to determine the potential for all-optical switching in these materials. Measurements of these nonlinearities are complicated by the various processes that contribute to the optical response. These include bound and free electrons and thermal effects. In addition, the nonlinear-optical response is a sensitive function of wavelength near the band edge,¹ so that measurements at different wavelengths are needed to assess the potential for optical switching properly.

© 1990 Optical Society of America