Abstract

GaAs-on-Si devices have attractive applications for opto-electronic integrated circuits because of their combined optical and electronicmerits. With the recent breakthroughs in the heteroepitaxial growth of high-quality GaAs films on Si substrates, a number of devices such as diode lasers, photodetectors and FET's have been demonstrated. In this paper, we report the growth and characterization of Schottky-barrier GaAs/AlGaAs phase modulators on Si as well as GaAs substrates. Experimental and theoretical studies were performed to access the feasibility of GaAs-on-Si waveguide devices as well as the probable effect of thermal stress on the electro-optic coefficient. We demonstrate for the first time that the interfacial stress does not affect the electro-optic coefficient and hence the phase shift efficiency.

© 1991 Optical Society of America