Abstract
Recently, we reported on a new Lateral Current Injection Laser suitable for optoelectronic integration, the Heterostructure Field Effect Laser (HFEL)[1], This device utilizes the field effect at the heterointerface wihin the same structure used to make the Heterostructure Field Effect Transistor (HFET)[2], and the Bipolar Inversion Channel Field Effect Transistor(BICFET)[3]. The laser and the HFET can be fabricated from the same single epitaxial growth sequence using the same fabrication sequence. The properties of each device can be optimized simultaneously.
© 1992 Optical Society of America
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