Add to BibSonomyAbstract
An external waveguide intensity modulator must have low insertion loss and require low drive power. While high contrast ratio, high speed and low drive voltage have been achieved in many recent demonstrations of III-V semiconductor modulators, most modulators still suffer from large insertion loss[1,2].
© 1992 Optical Society of America
PDF ArticleMore Like This
Large Electroabsorption Effect in InGaAs/InP Multiple Quantum Well Waveguide Modulator Grown by MO-CVD
Thomas H. Wood, Elizabeth C. Carr, Charles A. Burrus, Barry I. Miller, and Uziel Koren
MA4 Integrated and Guided Wave Optics (IGWO) 1988
Parameter optimization of GaAs/AI-GaAs multiple quantum well electroabsorption modulators
HUNG-SIK CHO and PAUL R. PRUCNAL
TUJ38 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989
Error performance of electroabsorptive multiple-quantum-well modulators
Yang Zhao, Zhengzhong Feng, and Cunkai Wu
TuS.4 OSA Annual Meeting (FIO) 1993