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Ion implantation is a technique which can be used to form waveguides in a wide range of materials - including crystals of the garnet family for which no alternative techniques exist - by bombarding the material surface with high energy ions and altering the refractive index [1]. We report the use of this method to form channel waveguides in two Nd3+ doped materials; Nd:YAG and Nd:GGG both of which have operated as ion implanted planar waveguide lasers [2,3]. The additional confinement in the plane is achieved without any significant increase in propagation losses, which are comparable in the planar and channel guides. In the Nd:YAG system submilliwatt thresholds were observed.
© 1992 Optical Society of America
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