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GaAs-on-Si modulator using a buried silicide reflector

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Abstract

Optical interconnection of electronic integrated circuit chips is currently of great interest. This would provide a much greater bandwidth of information flow on and off the chip, especially if surface-normal devices are used since then information may flow vertically from the chip and the entire area of the chip may be used rather than just the periphery. This capability is especially important for silicon very-large scale integrated circuits since input and output of information to the chip is a bottleneck.

© 1992 Optical Society of America

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