Abstract
Surface emitting lasers are important elements in optoelectronic integrated circuits and in smart pixel arrays. In these applications, low threshold and high wall plug efficiency are desired since high density packing of such devices is desired. Conventional vertical cavity lasers have been demonstrated that exhibit threshold current below 1 mA. However, stringent growth and processing requirements, maximum output power limitations, and low wall plug efficiency are serious limitations of these devices. Furthermore, the device concept is not easily used in either long or short wavelength lasers where high index of refraction difference dielectric layers are not easily integrated into the cavity.
© 1993 Optical Society of America
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