Abstract
Optically-generated free carriers can cause significant changes in the refractive index and the absorption coefficient of semiconductors. Optical switching and modulation that utilize injection of such free carriers were demonstrated previously in Si [1][2] and GaAs[3]. Most recently, an integrated optic Mach-Zehnder interferometer modulator that utilizes such optical activation in GaAs was reported by us[4] In this paper, we report successful extension of this work toward the construction of an optically-activated integrated optic directional-coupler modulator using GaAs ridge waveguides.
© 1993 Optical Society of America
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