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Carrier Heating Effects on High Frequency Conversion in Semiconductor Laser Devices

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Abstract

Several papers have recently reported experimental results concerning optical frequency conversion with very large frequency spacing (hundreds of gigahertzs) and high efficiency [1,2]. The explanation of such phenomena requires some very fast nonlinearity in the material. Several authors have invoked hot carrier effects to explain ultrafast refractive index dynamics in semiconductor lasers [3, 4, 5].

© 1993 Optical Society of America

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