Abstract

Lightwave communication has become the technology of choice for long-haul, high-bit- rate transmission[1]. While optical transmission has the benefits of high bandwidth and low signal loss, system design and fabrication are usually relatively expensive. As a result, there is a need to develop low cost components and circuits. To date, optoelectronic circuitry has utilized III-V compound materials. However, Si integrated circuit technology is mature, compact, inexpensive, and has demonstrated high reliability. The speed of Si devices has been improved dramatically by scaling the channel length of Si-MOSFETs into the deep submicron regime[2]- [3]. These characteristics make Si-based integrated circuit technology very attractive for lightwave communications, particularly, for short-haul, low-bit-rate communication systems such as local area networks and domestic services. We report an integrated receiver which consists of a planar Si p-i-n photodiode and a Si-MOSFET preamplifier.

© 1993 Optical Society of America