Abstract

Operation of LiNbO₃ devices at high optical power levels has become a practical issue owing to the use of the devices in analog optical links [1]. Optical damage at high power and long wavelength has not been well characterized, especially with respect to its effects in an actual interferometric modulator. We report here the results of long-term (up to 200 h), high-power (up to 400 mW) tests, at 1321-, 1064-, and 850-nm wavelengths, of LiNbO₃ waveguide devices made using both Ti-indiffused and proton-exchanged waveguides.

© 1993 Optical Society of America