Abstract
Rapid, low-voltage electrooptic light modulators based on III-V quantum-well materials admit both monolithic integration and optimization of electrooptic properties through band gap engineering. In quantum-wells however the quadratic Stark shift in the position of the band gap with electric field is appreciably affected by the enhanced excitonic binding energy, the reduction in the oscillator strength at high fields due to the real-space displacement of the electron and hole wave functions and the field-induced excitonic linewidth broadening.
© 1994 Optical Society of America
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