Abstract

Strained quantum-well lasers have been demonstrated to show superior performance over conventional semiconductor lasers in many aspects of the laser characteristics. In this talk, theoretical modeling of the strained quantum-well lasers including the electronic properties such as band structures with valence band-mixing effects and the optical properties such as polarization-dependent gain and lasing characteristics will be illustrated. Important issues including the Auger recombination rates and many-body effects on the laser performance will be discussed.

© 1994 Optical Society of America