Abstract

Waveguide-photodetector combinations for X = 1.3pm and X = 1.55pm operation have been fabricated using MBE-grown SiGe layers. The detector is based on 20 SiGe layers, imbedded in Si, with triangular shaped Ge-profile for a faster escape of the photogenerated holes at moderate (wlOV) reverse bias. The detector response has been measured in time and frequency domain as a function of the bias voltage. External quantum efficiencies, including single-mode fiber -chip coupling, above 20% at X = 1.3pm and dark currents below 1pA have been achieved.

© 1994 Optical Society of America