Abstract

A nin-waveguide structure containing Si doped AlGaAs/GaAs cladding layers and an intrinsic guide layer with InGaAs quantum wells and GaAs barriers has been utilized to realize waveguide modulators and switches. We present experimental results on the properties of waveguide absorption modulators [ 1] and phase modulators [2]. We further utilized the advantages of the nin-structure to realize an internal reflection switch that uses the concept of a depletion region below a Schottky-contact.

© 1994 Optical Society of America