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Consistent Refractive Index Formula for AlxGa1-xAs below the Band Edge

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Abstract

AlxGa1-xAs is an important material for laser diodes and other optoelectronic devices. Accurate AlGaAs refractive index data is extremely useful for the design of advanced devices (VCSEL Bragg reflectors1, WDM components2) and is essential for fast, nondestructive optical characterization of epitaxial layers.3,4 Despite AlGaAs index measurements by several groups,5-11 the literature is neither consistent nor complete. The data of Aspnes et al8 and Casey et al12 do not extend to λ >1.0μm, and indices reported for nominally identical alloys by different groups8,12,13 differ by as much as Δn =0.05, too large to attribute to measurement uncertainty (typically Δn < 0.015).8-12 All analytic index formulas n(x,λ.) (eg: ref. 14) proposed to date are limited by these difficulties. Here we obtain a formula which accurately describes AlGaAs indices for λ=1.5 to 0.75μm, using a consistent re-analysis of earlier AlGaAs index data and additional index measurements of our own to extend the data to longer wavelength.

© 1995 Optical Society of America

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