Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Avalanche Gain in InAsyP1-y Photodetectors for Mid-IR focal Plane Arrays

Not Accessible

Your library or personal account may give you access

Abstract

Avalanche gains >80 are observed in InAsyP1-y (0.1<y<0.3) grown on p-type InP substrates with lattice strains ≤1%. The devices have a primary dark current ≥200 pA. The InAsyP1-y layers have the same lattice parameter as compositions of InxGa1-xAs which absorb wavelengths ≤2.1 μm, for use in avalanche photodiode imaging arrays operating in the mid-IR spectral range.

© 1995 Optical Society of America

PDF Article
More Like This
InxGa1−xAs/InAsyP1−y lasers and photodiodes for 2.55-μm optical fiber communications

R. U. MARTINELLI, T. J. ZAMEROWSKI, and P. A. LONGEWAY
TuC6 Optical Fiber Communication Conference (OFC) 1988

InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP Substrates for Mid-IR Diode Lasers

J. Kirch, T. Garrod, S. Kim, J. H. Park, J. C. Shin, L. J. Mawst, T. F. Kuech, X. Song, S. E. Babcock, I. Vurgaftman, and J. R. Meyer
CTuGG6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Low Excess Noise AlxIn1-xAsySb1-y (x: 0.3~0.7) Avalanche Photodiodes

M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell
STh1G.1 CLEO: Science and Innovations (CLEO:S&I) 2016

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved