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A high frequency current modulation technique was used to measure the linewidth enhancement factor of vertical cavity surface emitting lasers. It is found that the ratio of the phase modulation index p to the amplitude modulation index m/2 is a strong function of modulation frequency R, due to the presence of nonlinear gain, as reported for many kinds of edge-emitting semiconductor lasers1,2. The linewidth enhancement factor and nonlinear gain coefficient were obtained from measurements of 2β/m versus Ω. The measured nonlinear gain of the VCSEL device was found to decrease for an increased pump level.
© 1996 Optical Society of America
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