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Investigation of the resolution limit of the hydrogen Plasma Induced Defect Layer Intermixing Process

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Abstract

Different schemes for realising photonic and optoelectronic integrated Circuits (OEICs & PICs) have been studied to replace the well known etch and overgrowth technique. The latter is usually associated with low efficiencies due to the nonradiative centres generated at the regrown interfaces and poor yield performance. Quantum well intermixing (QWI) has been developed so it is now a major contender for replacing the etch and regrowth method. Various QWI techniques have been developed [1]-[3]--one of these is to use point defects created by exposure to a hydrogen for layer intermixing; such a process has been used to realise PICs and OEICs [4] in materials with profiles that incorporate quantum wells at depths typical to those used for realising laser diodes (about 1 μm deep).

© 1996 Optical Society of America

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