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Impact of Quantum Confinement and Strain Effects on the Negative Chirp Parameter of InGaAsP/InP QW Electroabsorption Modulators

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Abstract

For dispersion-free transmission with a standard fiber in the 1.55 μm window, a light source capable of negative-chirp modulation is strongly desired. External modulation by electroabsorption (EA) modulators [l]-[5] has attracted much interest because it provides negative-chirp modulation where the averaged values of chirp parameter are negative. The problem is that the conventional negative-chirp modulation using larger bias-voltage and/or detuning to smaller wavelengths is accompanied by excessive propagation loss. To solve these problems, we aim to establish a design guideline for quantum well (QW) EA modulators that makes it possible to attain the ideal situation where the negative chirp parameters are independent of the applied electric fields. In this paper, the impact of quantum confinement and/or strain effects on the chirp parameter for TE-polarized small-signal modulation by using InGaAsP quaternary material is analyzed theoretically. Based on the analysis, we predict that a combination of a wide well and tensile strain will provide almost a continuously negative field-independent chirp parameter.

© 1996 Optical Society of America

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